Chin. J. Semicond. > 2002, Volume 23 > Issue 7 > 722-724
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纳米4-H碳化硅薄膜的掺杂现象

张洪涛 , 徐重阳 , 邹雪城 , 王长安 , 赵伯芳 , 周雪梅 and 曾祥兵

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Key words: SiC薄膜, 纳米结构, 掺杂, 电导率MeyerNeldel规则

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    Received: 19 August 2015 Revised: Online: Published: 01 July 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(7): 722-724
      张洪涛, 徐重阳, 邹雪城, 王长安, 赵伯芳, 周雪梅, 曾祥兵. 纳米4-H碳化硅薄膜的掺杂现象[J]. 半导体学报(英文版), 2002, 23(7): 722-724.
      Citation:
      张洪涛, 徐重阳, 邹雪城, 王长安, 赵伯芳, 周雪梅, 曾祥兵. 纳米4-H碳化硅薄膜的掺杂现象[J]. 半导体学报(英文版), 2002, 23(7): 722-724.
      shu

      • Received Date: 2015-08-19

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