Chin. J. Semicond. > 2001, Volume 22 > Issue 7 > 875-880
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弛豫SiGe衬底上SiGe/SiⅡ型量子阱

李代宗 , 黄昌俊 , 于卓 , 成步文 , 余金中 and 王启明

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Key words: SiGe/Si, 应变弛豫, 型量子阱

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(7): 875-880
      李代宗, 黄昌俊, 于卓, 成步文, 余金中, 王启明. 弛豫SiGe衬底上SiGe/SiⅡ型量子阱[J]. 半导体学报(英文版), 2001, 22(7): 875-880.
      Citation:
      李代宗, 黄昌俊, 于卓, 成步文, 余金中, 王启明. 弛豫SiGe衬底上SiGe/SiⅡ型量子阱[J]. 半导体学报(英文版), 2001, 22(7): 875-880.
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      • Received Date: 2015-08-20

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