Chin. J. Semicond. > 1997, Volume 18 > Issue 4 > 292-296
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缓变基区对HBT性能的影响

张玉明 and 张义门

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(4): 292-296
      张玉明, 张义门. 缓变基区对HBT性能的影响[J]. 半导体学报(英文版), 1997, 18(4): 292-296.
      Citation:
      张玉明, 张义门. 缓变基区对HBT性能的影响[J]. 半导体学报(英文版), 1997, 18(4): 292-296.
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      • Received Date: 2015-08-19

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