Chin. J. Semicond. > 2007, Volume 28 > Issue 2 > 241-245
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Total Ionizing Dose Effects of Deep Submicron nMOSFET Devices

Meng Zhiqin, Hao Yue, Tang Yu, Ma Xiaohua, Zhu Zhiwei and Li Yongkun

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Abstract: We study the total ionizing dose sensitivity of 0.25μm nMOSFETs.The off-state leakage current,transconductance,and the gate leakage current of the devices are monitored.Experiment shows that the effect on irradiation is mostly caused by the space charges in the field oxide,which is verified by simulation.

Key words: X-ray, irradiation, total dose effect, off-state leakage current

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    Received: 18 August 2015 Revised: 11 October 2006 Online: Published: 01 February 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(2): 241-245
      Meng Zhiqin, Hao Yue, Tang Yu, Ma Xiaohua, Zhu Zhiwei, Li Yongkun. Total Ionizing Dose Effects of Deep Submicron nMOSFET Devices[J]. Journal of Semiconductors, 2007, 28(2): 241-245. ****Meng Z Q, Hao Y, Tang Y, Ma X H, Zhu Z W, Li Y K. Total Ionizing Dose Effects of Deep Submicron nMOSFET Devices[J]. Chin. J. Semicond., 2007, 28(2): 241.
      Citation:
      Meng Zhiqin, Hao Yue, Tang Yu, Ma Xiaohua, Zhu Zhiwei, Li Yongkun. Total Ionizing Dose Effects of Deep Submicron nMOSFET Devices[J]. Journal of Semiconductors, 2007, 28(2): 241-245. ****
      Meng Z Q, Hao Y, Tang Y, Ma X H, Zhu Z W, Li Y K. Total Ionizing Dose Effects of Deep Submicron nMOSFET Devices[J]. Chin. J. Semicond., 2007, 28(2): 241.
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      Total Ionizing Dose Effects of Deep Submicron nMOSFET Devices

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-08-25
      • Revised Date: 2006-10-11
      • Published Date: 2007-01-30

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