Chin. J. Semicond. > 2007, Volume 28 > Issue 2 > 241-245
|

PAPERS

Total Ionizing Dose Effects of Deep Submicron nMOSFET Devices

Meng Zhiqin, Hao Yue, Tang Yu, Ma Xiaohua, Zhu Zhiwei and Li Yongkun

+ Author Affiliations

PDF

Abstract: We study the total ionizing dose sensitivity of 0.25μm nMOSFETs.The off-state leakage current,transconductance,and the gate leakage current of the devices are monitored.Experiment shows that the effect on irradiation is mostly caused by the space charges in the field oxide,which is verified by simulation.

Key words: X-ray, irradiation, total dose effect, off-state leakage current

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3547 Times PDF downloads: 1525 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 11 October 2006 Online: Published: 01 February 2007

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2007  >  28(2): 241-245
      Meng Zhiqin, Hao Yue, Tang Yu, Ma Xiaohua, Zhu Zhiwei, Li Yongkun. Total Ionizing Dose Effects of Deep Submicron nMOSFET Devices[J]. Journal of Semiconductors, 2007, 28(2): 241-245. ****Meng Z Q, Hao Y, Tang Y, Ma X H, Zhu Z W, Li Y K. Total Ionizing Dose Effects of Deep Submicron nMOSFET Devices[J]. Chin. J. Semicond., 2007, 28(2): 241.
      Citation:
      Meng Zhiqin, Hao Yue, Tang Yu, Ma Xiaohua, Zhu Zhiwei, Li Yongkun. Total Ionizing Dose Effects of Deep Submicron nMOSFET Devices[J]. Journal of Semiconductors, 2007, 28(2): 241-245. ****
      Meng Z Q, Hao Y, Tang Y, Ma X H, Zhu Z W, Li Y K. Total Ionizing Dose Effects of Deep Submicron nMOSFET Devices[J]. Chin. J. Semicond., 2007, 28(2): 241.
      shu

      Total Ionizing Dose Effects of Deep Submicron nMOSFET Devices

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-08-25
      • Revised Date: 2006-10-11
      • Published Date: 2007-01-30

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return