| Citation: |
Yang Rong, Li Junfeng, Xu Qiuxia, Hai Chaohe, Han Zhengsheng, Qian He. A High Performance 0.18μm RF nMOSFET with 53GHz Cutoff Frequency[J]. Journal of Semiconductors, 2006, 27(8): 1343-1346.
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Yang R, Li J F, Xu Q X, Hai C H, Han Z S, Qian H. A High Performance 0.18μm RF nMOSFET with 53GHz Cutoff Frequency[J]. Chin. J. Semicond., 2006, 27(8): 1343.
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A High Performance 0.18μm RF nMOSFET with 53GHz Cutoff Frequency
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Abstract
This paper presents the fabrication and performance of a 0.18μm nMOSFET for RF applications.This device features a nitrided oxide/poly-silicon gate stack,a lightly-doped-drain source/drain extension,a retrograde channel doping profile,and a multiple-finger-gate layout,each of which is achieved with conventional semiconductor fabrication facilities.The 0.18μm gate length is obtained by e-beam direct-writing.The device is fabricated with a simple process flow and exhibits excellent DC and RF performance:the threshold voltage of 0.52V,the sub-threshold swing of 80mV/dec,the drain-induced-barrier-lowering factor of 69mV/V,the off-state current of 0.5nA/μm,the saturation drive current of 458μA/μm (for the 6nm gate oxide and the 3V supply voltage),the saturation transconductance of 212μS/μm,and the cutoff frequency of 53GHz.-
Keywords:
- structure,
- process,
- radio frequency,
- nMOSFET
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References
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Proportional views
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