Chin. J. Semicond. > 1999, Volume 20 > Issue 5 > 433-436
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利用改进的固相外延技术改善CMOS/SOS器件的特性

刘忠立 , 和致经 , 于芳 , 张永刚 and 郁元桓

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    Received: 20 August 2015 Revised: Online: Published: 01 May 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(5): 433-436
      刘忠立, 和致经, 于芳, 张永刚, 郁元桓. 利用改进的固相外延技术改善CMOS/SOS器件的特性[J]. 半导体学报(英文版), 1999, 20(5): 433-436.
      Citation:
      刘忠立, 和致经, 于芳, 张永刚, 郁元桓. 利用改进的固相外延技术改善CMOS/SOS器件的特性[J]. 半导体学报(英文版), 1999, 20(5): 433-436.
      shu

      • Received Date: 2015-08-20

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