Chin. J. Semicond. > 2006, Volume 27 > Issue 3 > 413-418
|

PAPERS

Impact of Transition-Metal Contamination on Oxygen Precipitation in Czochralski Silicon Under Rapid Thermal Processing

Wu Dongdong, Yang Deren, Xi Zhenqiang and Que Duanlin

+ Author Affiliations

PDF

Abstract: The effects of the transition metals copper and nickel on oxygen precipitation in Czochralski silicon under a rapid thermal process are investigated.It is found that interstitial copper has almost no effect on oxygen precipitation,but copper precipitation markedly enhances oxygen precipitation.However,neither interstitial nickel nor nickel precipitation affects oxygen precipitation.The reasons for the effects of copper and nickel contamination on oxygen precipitation are discussed in light of oxygen precipitation nucleation theory.

Key words: Si, oxygen precipitation, Cu, Ni

1

Boron-doped III–V semiconductors for Si-based optoelectronic devices

Chao Zhao, Bo Xu, Zhijie Wang, Zhanguo Wang

Journal of Semiconductors, 2020, 41(1): 011301. doi: 10.1088/1674-4926/41/1/011301
2

Precision photonic integration for future large-scale photonic integrated circuits

Xiangfei Chen

Journal of Semiconductors, 2019, 40(5): 050301. doi: 10.1088/1674-4926/40/5/050301
3

Controllable growth of GeSi nanostructures by molecular beam epitaxy

Yingjie Ma, Tong Zhou, Zhenyang Zhong, Zuimin Jiang

Journal of Semiconductors, 2018, 39(6): 061004. doi: 10.1088/1674-4926/39/6/061004
4

Novel design techniques for noise-tolerant power-gated CMOS circuits

Rumi Rastogi, Sujata Pandey

Journal of Semiconductors, 2017, 38(1): 015001. doi: 10.1088/1674-4926/38/1/015001
5

Negative voltage bandgap reference with multilevel curvature compensation technique

Xi Liu, Qian Liu, Xiaoshi Jin, Yongrui Zhao, Jong-Ho Lee, et al.

Journal of Semiconductors, 2016, 37(5): 055008. doi: 10.1088/1674-4926/37/5/055008
6

Progress in complementary metal-oxide-semiconductor silicon photonics and optoelectronic integrated circuits

Hongda Chen, Zan Zhang, Beiju Huang, Luhong Mao, Zanyun Zhang, et al.

Journal of Semiconductors, 2015, 36(12): 121001. doi: 10.1088/1674-4926/36/12/121001
7

Comment on Chen et al. "Fabrication and photovoltaic conversion enhancement of graphene/n-Si Schottky barrier solar cells by electrophoretic deposition", Electrochimica Acta, 2014

Lara Valentic, Nima E. Gorji

Journal of Semiconductors, 2015, 36(9): 094012. doi: 10.1088/1674-4926/36/9/094012
8

Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon-germanium substrates

Pramod Kumar Tiwari, Gopi Krishna Saramekala, Sarvesh Dubey, Anand Kumar Mukhopadhyay

Journal of Semiconductors, 2014, 35(10): 104002. doi: 10.1088/1674-4926/35/10/104002
9

Impurity Deionization Effects on Surface Recombination DC Current–Voltage Characteristics in MOS Transistors

Chen Zuhui, Jie Binbin, Sah Chihtang

Journal of Semiconductors, 2010, 31(12): 121001. doi: 10.1088/1674-4926/31/12/121001
10

A novel on-chip high to low voltage power conversion circuit

Wang Hui, Wang Songlin, Lai Xinquan, Ye Qiang, Mou Zaixin, et al.

Journal of Semiconductors, 2009, 30(3): 035008. doi: 10.1088/1674-4926/30/3/035008
11

The Bipolar Field-Effect Transistor: VII. The Unipolar Current Mode for Analog-RF Operation (Two-MOS-Gates on Pure-Base)

Jie Binbin, Sah Chih-Tang

Journal of Semiconductors, 2009, 30(3): 031001. doi: 10.1088/1674-4926/30/3/031001
12

Optical properties in 1D photonic crystal structure using Si/C60 multilayers

Chen Jing, Tang Jiyu, Han Peide, Chen Junfang

Journal of Semiconductors, 2009, 30(4): 043001. doi: 10.1088/1674-4926/30/4/043001
13

Electromigration of Cu-Ni/Solder/Ni-Cu Structures

Zhang Jinsong, Xi Hongjia, Wu Yiping, Wu Fengshun

Journal of Semiconductors, 2008, 29(1): 174-178.

14

Dissolution at High Temperature and Re-Growth of Oxygen Precipitation in Czochralski Silicon Wafer

Fu Liming, Yang Deren, Ma Xiangyang, Guo Yang, Que Duanlin, et al.

Chinese Journal of Semiconductors , 2007, 28(1): 52-55.

15

DCXRD Investigation of a Ge/Si(001) Island Multilayer Structure

Shi Wenhua, Xue Chunlai, Luo Liping, Wang Qiming

Chinese Journal of Semiconductors , 2007, 28(2): 145-148.

16

Evidence of the Role of Carbon Vacancies in Nickel-Based Ohmic Contacts to n-Type Silicon Carbide

Guo Hui, Zhang Yimen, Zhang Yuming

Chinese Journal of Semiconductors , 2007, 28(1): 5-9.

17

An Optoelectronic Pulse Frequency Modulation Circuitfor Retinal Prosthesis

Liu Jinbin, Chen Hongda, Gao Peng, Pei Weihua, Sui Xiaohong, et al.

Chinese Journal of Semiconductors , 2006, 27(4): 700-704.

18

Rapid Thermal Annealing Characteristics of the Ge/Si(001)Nano-Island Multilayer

Shi Wenhua, Luo Liping, Zhao Lei, Zuo Yuhua, Wang Qiming, et al.

Chinese Journal of Semiconductors , 2006, 27(S1): 136-139.

19

Anealing Effect on Cu/ Ni/4H-SiC Schottky Barrier

Yang Weifeng, Yang Keqin, Chen Xiaping, Zhang Feng, Wang Liangjun, et al.

Chinese Journal of Semiconductors , 2005, 26(S1): 277-280.

20

Effects of Germanium on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon

Jiang Huihua, Yang Deren, Tian Daxi, Ma Xiangyang, Li Liben, et al.

Chinese Journal of Semiconductors , 2005, 26(11): 2107-2110.

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3172 Times PDF downloads: 1448 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 March 2006

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2006  >  27(3): 413-418
      Wu Dongdong, Yang Deren, Xi Zhenqiang, Que Duanlin. Impact of Transition-Metal Contamination on Oxygen Precipitation in Czochralski Silicon Under Rapid Thermal Processing[J]. Journal of Semiconductors, 2006, 27(3): 413-418. ****Wu D D, Yang D R, Xi Z Q, Que D L. Impact of Transition-Metal Contamination on Oxygen Precipitation in Czochralski Silicon Under Rapid Thermal Processing[J]. Chin. J. Semicond., 2006, 27(3): 413.
      Citation:
      Wu Dongdong, Yang Deren, Xi Zhenqiang, Que Duanlin. Impact of Transition-Metal Contamination on Oxygen Precipitation in Czochralski Silicon Under Rapid Thermal Processing[J]. Journal of Semiconductors, 2006, 27(3): 413-418. ****
      Wu D D, Yang D R, Xi Z Q, Que D L. Impact of Transition-Metal Contamination on Oxygen Precipitation in Czochralski Silicon Under Rapid Thermal Processing[J]. Chin. J. Semicond., 2006, 27(3): 413.
      shu

      Impact of Transition-Metal Contamination on Oxygen Precipitation in Czochralski Silicon Under Rapid Thermal Processing

      • State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China

      • State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310028,China

      • State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310029,China

      • State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310030,China

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return