Chin. J. Semicond. > 2003, Volume 24 > Issue 9 > 1005-1008

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Al_2O_3高k栅介质的可靠性

杨红 , 康晋锋 , 韩德栋 , 任驰 , 夏志良 , 刘晓彦 and 韩汝琦

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Key words: 高k栅介质, 可靠性, 时变击穿

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    Received: 20 August 2015 Revised: Online: Published: 01 September 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(9): 1005-1008
      杨红, 康晋锋, 韩德栋, 任驰, 夏志良, 刘晓彦, 韩汝琦. Al_2O_3高k栅介质的可靠性[J]. 半导体学报(英文版), 2003, 24(9): 1005-1008.
      Citation:
      杨红, 康晋锋, 韩德栋, 任驰, 夏志良, 刘晓彦, 韩汝琦. Al_2O_3高k栅介质的可靠性[J]. 半导体学报(英文版), 2003, 24(9): 1005-1008.
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      • Received Date: 2015-08-20

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