Chin. J. Semicond. > 1984, Volume 5 > Issue 6 > 689-693
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掺砷锗中基态能级裂距的作用

傅绮英

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    Received: 20 August 2015 Revised: Online: Published: 01 June 1984

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      Article Navigation >  Journal of Semiconductors  > 1984  >  5(6): 689-693
      傅绮英. 掺砷锗中基态能级裂距的作用[J]. 半导体学报(英文版), 1984, 5(6): 689-693.
      Citation:
      傅绮英. 掺砷锗中基态能级裂距的作用[J]. 半导体学报(英文版), 1984, 5(6): 689-693.
      shu

      • Received Date: 2015-08-20

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