Chin. J. Semicond. > 2001, Volume 22 > Issue 7 > 826-831
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正向栅控二极管的 R- G电流直接表征 NMOSFET沟道 pocket或 halo注入区(英文)

何进 , 黄爱华 , 张兴 and 黄如

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Key words: 正向栅控二极管, R-G电流, NMOSFET, pocket或halo注入区, 界面态, 有效表面浓度

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(7): 826-831
      何进, 黄爱华, 张兴, 黄如. 正向栅控二极管的 R- G电流直接表征 NMOSFET沟道 pocket或 halo注入区(英文)[J]. 半导体学报(英文版), 2001, 22(7): 826-831.
      Citation:
      何进, 黄爱华, 张兴, 黄如. 正向栅控二极管的 R- G电流直接表征 NMOSFET沟道 pocket或 halo注入区(英文)[J]. 半导体学报(英文版), 2001, 22(7): 826-831.
      shu

      • Received Date: 2015-08-20

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