Abstract: The light intensity distribution and development processes during the preparation of two-dimensional patterned silicon substrates by holographic lithography are simulated.Different periods can be achieved by varying the wavelength and the angle between the sample surface and the laser beams.Large-area uniform two-dimensional sub-micrometer patterned n-type doped (100) silicon substrate has been fabricated by single exposure with a triple beam and wet chemical etching.The method is suitable for fabricating array patterns on large silicon substrates.

Key words: holographic lithography, silicon substrate, patterned substrate