Chin. J. Semicond. > 2003, Volume 24 > Issue 6 > 574-578
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用过氧化氢后处理多孔硅厚膜的一种新技术(英文)

龙永福 , 朱自强 and 赖宗声

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Key words: 多孔硅, 后处理, 过氧化氢

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(6): 574-578
      龙永福, 朱自强, 赖宗声. 用过氧化氢后处理多孔硅厚膜的一种新技术(英文)[J]. 半导体学报(英文版), 2003, 24(6): 574-578.
      Citation:
      龙永福, 朱自强, 赖宗声. 用过氧化氢后处理多孔硅厚膜的一种新技术(英文)[J]. 半导体学报(英文版), 2003, 24(6): 574-578.
      shu

      • Received Date: 2015-08-20

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