| Citation: |
Li Kang, Hao Yue, Liu Hongxia, Fang Jianping, Xue Hongmin. Modeling and Simulation of Hot-Carrier Degradation in Deep-Submicron pMOSFET’s[J]. Journal of Semiconductors, 2005, 26(11): 2169-2174.
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Li K, Hao Y, Liu H X, Fang J P, Xue H M. Modeling and Simulation of Hot-Carrier Degradation in Deep-Submicron pMOSFET’s[J]. Chin. J. Semicond., 2005, 26(11): 2169.
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Modeling and Simulation of Hot-Carrier Degradation in Deep-Submicron pMOSFET’s
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Abstract
A HCI (hot carrier injection) degradation model of DSM(deep submicron) pMOSFETs is studied.A physical description of a time-dependent gate current is given with a stream function analysis.Based on this model,the HCI degradation model of DSM pMOSFETs is updated.A kind of reliability simulation method for HCI degradation, based on the degradation model, is then proposed,which is used to predict the degree of HCI degradation of the devices under static stress.Analysis and comparisons of simulation results are also given.This kind of simulation method is used in XDRT tools for HCI reliability analysis of pMOSFET devices.-
Keywords:
- HCI,
- time-dependent gate current,
- BSIM3v3,
- reliability simulation
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References
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