Chin. J. Semicond. > 1984, Volume 5 > Issue 3 > 266-274
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Si:Pd深能级的研究

阮圣央 , 周洁 , 张砚华 , 吉秀江 , 郑秉茹 , 李树英 , 杨锡权 and 谭飞

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1984

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      Article Navigation >  Journal of Semiconductors  > 1984  >  5(3): 266-274
      阮圣央, 周洁, 张砚华, 吉秀江, 郑秉茹, 李树英, 杨锡权, 谭飞. Si:Pd深能级的研究[J]. 半导体学报(英文版), 1984, 5(3): 266-274.
      Citation:
      阮圣央, 周洁, 张砚华, 吉秀江, 郑秉茹, 李树英, 杨锡权, 谭飞. Si:Pd深能级的研究[J]. 半导体学报(英文版), 1984, 5(3): 266-274.
      shu

      • Received Date: 2015-08-20

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