Chin. J. Semicond. > 1993, Volume 14 > Issue 6 > 368-374
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用硅化物作注入阻挡层形成浅结

鲍希茂 , 严海 and 茅保华

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    Received: 20 August 2015 Revised: Online: Published: 01 June 1993

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      Article Navigation >  Journal of Semiconductors  > 1993  >  14(6): 368-374
      鲍希茂, 严海, 茅保华. 用硅化物作注入阻挡层形成浅结[J]. 半导体学报(英文版), 1993, 14(6): 368-374.
      Citation:
      鲍希茂, 严海, 茅保华. 用硅化物作注入阻挡层形成浅结[J]. 半导体学报(英文版), 1993, 14(6): 368-374.
      shu

      • Received Date: 2015-08-20

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