| Citation: |
Ren Zheng, Shi Yanling, 胡少坚, Hu Shaojian, Jin Meng, Zhu Jun, Chen Shoumian. Optimization of BSIM3 I-V Modeling of High Voltage MOS Devices[J]. Journal of Semiconductors, 2006, 27(6): 1073-1077.
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Ren Z, Shi Y L, Hu S J, Jin M, Zhu J, Chen S M. Optimization of BSIM3 I-V Modeling of High Voltage MOS Devices[J]. Chin. J. Semicond., 2006, 27(6): 1073.
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Optimization of BSIM3 I-V Modeling of High Voltage MOS Devices
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Abstract
This paper presents a technique for modeling high-voltage, lightly-doped-drain MOS (HV MOS) devices widely used in high voltage ICs.In order to improve BSIM3v3 SPICE I-V for modeling HV MOS devices,measurements on HV MOS devices are performed with an Agilent ICCAP system.The results reveal the Rds’s dependence on Vgs,Vds,and Vbs.The theory of HV MOS devices is analyzed,and the algorithms the Rds and Vdsat in the BSIM3v3 model are optimized in the BSIM3v3 source code.Three parameters are added:a gate bias quadric coefficient of Rds(Prwg2) and two gate bias coefficients of δ(δ1,δ2).The free source code of the SPICE simulator and the BSIM3v3 library are modified and compiled.With this optimized simulator,the simulated I-V data for HV MOS devices after parameter extraction fit the measured results very well.-
Keywords:
- BSIM3 model,
- SPICE,
- HV MOS devices,
- parameter extraction,
- curve fitting
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