Chin. J. Semicond. > 2005, Volume 26 > Issue 4 > 641-644

Growth of Strained Si_1－xGe_x Layer by UV/UHV/CVD

Hu Huiyong , Zhang Heming , Dai Xianying , Li Kaicheng , Wang Wei , Zhu Yonggang , Wang Shunxiang , Cui Xiaoying and and Wang Xiyuan

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Key words: Si_1－xGe_x, ultrahigh vacuum, ultraviolet light, chemical vapor deposition

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Received: 19 August 2015 Revised: Online: Published: 01 April 2005

Article Navigation > Journal of Semiconductors > 2005 > 26(4): 641-644

Hu Huiyong, Zhang Heming, Dai Xianying, Li Kaicheng, Wang Wei, Zhu Yonggang, Wang Shunxiang, Cui Xiaoying, and Wang Xiyuan. Growth of Strained Si1－xGex Layer by UV/UHV/CVD[J]. 半导体学报(英文版), 2005, 26(4): 641-644.

Citation:

Hu Huiyong, Zhang Heming, Dai Xianying, Li Kaicheng, Wang Wei, Zhu Yonggang, Wang Shunxiang, Cui Xiaoying, and Wang Xiyuan. Growth of Strained Si_1－xGe_x Layer by UV/UHV/CVD[J]. 半导体学报(英文版), 2005, 26(4): 641-644.

Hu Huiyong, Zhang Heming, Dai Xianying, Li Kaicheng, Wang Wei, Zhu Yonggang, Wang Shunxiang, Cui Xiaoying, and Wang Xiyuan. Growth of Strained Si1－xGex Layer by UV/UHV/CVD[J]. 半导体学报(英文版), 2005, 26(4): 641-644.

Citation:

Hu Huiyong, Zhang Heming, Dai Xianying, Li Kaicheng, Wang Wei, Zhu Yonggang, Wang Shunxiang, Cui Xiaoying, and Wang Xiyuan. Growth of Strained Si_1－xGe_x Layer by UV/UHV/CVD[J]. 半导体学报(英文版), 2005, 26(4): 641-644.

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