Chin. J. Semicond. > 2004, Volume 25 > Issue 9 > 1079-1083
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离子束刻蚀法制备大功率高效率650nm AlGaInP可见光激光器(英文)

徐云 , 曹青 , 孙永伟 , 叶晓军 , 侯识华 , 郭良 and 陈良惠

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Key words: AlGaInP可见光激光器, Ar离子束干法刻蚀

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    Received: 19 August 2015 Revised: Online: Published: 01 September 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(9): 1079-1083
      徐云, 曹青, 孙永伟, 叶晓军, 侯识华, 郭良, 陈良惠. 离子束刻蚀法制备大功率高效率650nm AlGaInP可见光激光器(英文)[J]. 半导体学报(英文版), 2004, 25(9): 1079-1083.
      Citation:
      徐云, 曹青, 孙永伟, 叶晓军, 侯识华, 郭良, 陈良惠. 离子束刻蚀法制备大功率高效率650nm AlGaInP可见光激光器(英文)[J]. 半导体学报(英文版), 2004, 25(9): 1079-1083.
      shu

      • Received Date: 2015-08-19

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