Chin. J. Semicond. > 2002, Volume 23 > Issue 10 > 1014-1017
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利用电阻场板提高SOI-LIGBT的性能(英文)

杨洪强 , 韩磊 and 陈星弼

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Key words: 电阻场板, 动态控制阳极短路, 关断时间, 击穿电压, 正向导通压降

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(10): 1014-1017
      杨洪强, 韩磊, 陈星弼. 利用电阻场板提高SOI-LIGBT的性能(英文)[J]. 半导体学报(英文版), 2002, 23(10): 1014-1017.
      Citation:
      杨洪强, 韩磊, 陈星弼. 利用电阻场板提高SOI-LIGBT的性能(英文)[J]. 半导体学报(英文版), 2002, 23(10): 1014-1017.
      shu

      • Received Date: 2015-08-19

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