Chin. J. Semicond. > 2004, Volume 25 > Issue 12 > 1580-1585
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新型图形化 SOI LDMOS结构的性能分析(英文)

程新红 , 杨文伟 , 宋朝瑞 , 俞跃辉 and 沈达升

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Key words: 图形化SOI, LDMOS, 浮体效应, 自加热效应

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(12): 1580-1585
      程新红, 杨文伟, 宋朝瑞, 俞跃辉, 沈达升. 新型图形化 SOI LDMOS结构的性能分析(英文)[J]. 半导体学报(英文版), 2004, 25(12): 1580-1585.
      Citation:
      程新红, 杨文伟, 宋朝瑞, 俞跃辉, 沈达升. 新型图形化 SOI LDMOS结构的性能分析(英文)[J]. 半导体学报(英文版), 2004, 25(12): 1580-1585.
      shu

      • Received Date: 2015-08-19

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