Chin. J. Semicond. > 2002, Volume 23 > Issue 2 > 222-224

CONTENTS

国家自然科学基金半导体学科2001年项目概况分析

何杰 , 王晓晖 and 夏传钺

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1

Reactive facet of carbon nitride single crystals

Kong Liu

Journal of Semiconductors, 2020, 41(9): 090202. doi: 10.1088/1674-4926/41/9/090202

2

Recent advances in flexible and wearable organic optoelectronic devices

Hong Zhu, Yang Shen, Yanqing Li, Jianxin Tang

Journal of Semiconductors, 2018, 39(1): 011011. doi: 10.1088/1674-4926/39/1/011011

3

Printable inorganic nanomaterials for flexible transparent electrodes: from synthesis to application

Dingrun Wang, Yongfeng Mei, Gaoshan Huang

Journal of Semiconductors, 2018, 39(1): 011002. doi: 10.1088/1674-4926/39/1/011002

4

Graphene-based flexible and wearable electronics

Tanmoy Das, Bhupendra K. Sharma, Ajit K. Katiyar, Jong-Hyun Ahn

Journal of Semiconductors, 2018, 39(1): 011007. doi: 10.1088/1674-4926/39/1/011007

5

Oxide-based thin film transistors for flexible electronics

Yongli He, Xiangyu Wang, Ya Gao, Yahui Hou, Qing Wan, et al.

Journal of Semiconductors, 2018, 39(1): 011005. doi: 10.1088/1674-4926/39/1/011005

6

Engineering in-plane silicon nanowire springs for highly stretchable electronics

Zhaoguo Xue, Taige Dong, Zhimin Zhu, Yaolong Zhao, Ying Sun, et al.

Journal of Semiconductors, 2018, 39(1): 011001. doi: 10.1088/1674-4926/39/1/011001

7

Packaging investigation of optoelectronic devices

Zhike Zhang, Yu Liu, Jianguo Liu, Ninghua Zhu

Journal of Semiconductors, 2015, 36(10): 101001. doi: 10.1088/1674-4926/36/10/101001

8

Effect of electric field on metallic SWCNT interconnects for nanoscale technologies

Harsimran Kaur, Karamjit Singh Sandha

Journal of Semiconductors, 2015, 36(3): 035001. doi: 10.1088/1674-4926/36/3/035001

9

Effects of defects on the electronic properties of WTe2 armchair nanoribbons

Bahniman Ghosh, Abhishek Gupta, Bhupesh Bishnoi

Journal of Semiconductors, 2014, 35(11): 113002. doi: 10.1088/1674-4926/35/11/113002

10

In situ TEM/SEM electronic/mechanical characterization of nano material with MEMS chip

Yuelin Wang, Tie Li, Xiao Zhang, Hongjiang Zeng, Qinhua Jin, et al.

Journal of Semiconductors, 2014, 35(8): 081001. doi: 10.1088/1674-4926/35/8/081001

11

A fuzzy-logic-based approach to accurate modeling of a double gate MOSFETfor nanoelectronic circuit design

F. Djeffal, A. Ferdi, M. Chahdi

Journal of Semiconductors, 2012, 33(9): 094001. doi: 10.1088/1674-4926/33/9/094001

12

Improved field emission properties of carbon nanotube cathodes by nickel electroplating and corrosion

Xiao Xiaojing, Ye Yun, Zheng Longwu, Guo Tailiang

Journal of Semiconductors, 2012, 33(5): 053004. doi: 10.1088/1674-4926/33/5/053004

13

Transmission line model of carbon nanotubes: through the Boltzmann transport equation

Fang Zhou

Journal of Semiconductors, 2011, 32(6): 062002. doi: 10.1088/1674-4926/32/6/062002

14

Improving Carbon Nanotube Field Emission Display Luminescence Uniformity by Introducing a Reactive Current Limiting Layer

Li Xin, He Yongning, Liu Weihua, Zhu Changchun

Journal of Semiconductors, 2008, 29(3): 574-577.

15

Electron Injection Enhancement by Diamond-Like Carbon Film in Polymer Electroluminescence Devices

Li Hongjian, Yan Lingling, Huang Baiyun, Yi Danqing, Hu Jin, et al.

Chinese Journal of Semiconductors , 2006, 27(1): 30-34.

16

Quantum Measurement of Single Electron State by a Mesoscopic Detector

Hu Xuening, Luo Junyan, Li Xinqi

Chinese Journal of Semiconductors , 2006, 27(2): 218-222.

17

Electronic Structure of Semiconductor Nanocrystals

Li Jingbo, Wang Linwang, Wei Suhuai

Chinese Journal of Semiconductors , 2006, 27(2): 191-196.

18

Full Band Monte Carlo Simulation of Electron Transport in Ge with Anisotropic Scattering Process

Chen, Yong, and, Ravaioli, Umberto, et al.

Chinese Journal of Semiconductors , 2005, 26(3): 465-471.

19

Properties of Carbon Nanotube Field Emission

Chen Shaofeng, Xia Shanhong, Song Qinglin, Hu Ping' an, Liu Yunqi, et al.

Chinese Journal of Semiconductors , 2003, 24(S1): 166-169.

20

Fabrication and characteristics of metal particle modulated carbon Nanotube Field-effect and single Electron transistors

Peng Lianmao, Chen Ging, Liang Xuelei, Che Renchao, Xia Yang, et al.

Chinese Journal of Semiconductors , 2003, 24(S1): 170-174.

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    Xue Zengguan, Zhang Qifeng, Song Jiaohua, Guo Dengzhu, Liang Xuelei, Shen Zhiyong, Chen Qing, Gao Song, Zhang Gengmin, Zhao Xingyu, Liu Weimin, Peng Lianmao, Wu Jinlei, Wu Quande. Nanoelectronics[J]. Journal of Semiconductors, 2003, 24(S1): 17-21.
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    Received: 19 August 2015 Revised: Online: Published: 01 February 2002

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      Xue Zengguan, Zhang Qifeng, Song Jiaohua, Guo Dengzhu, Liang Xuelei, Shen Zhiyong, Chen Qing, Gao Song, Zhang Gengmin, Zhao Xingyu, Liu Weimin, Peng Lianmao, Wu Jinlei, Wu Quande. Nanoelectronics[J]. Journal of Semiconductors, 2003, 24(S1): 17-21. ****Xue Z G, Zhang Q F, Song J H, Guo D Z, Liang X L, Shen Z Y, Chen Q, Gao S, Zhang G M, Zhao X Y, Liu W M, Peng L M, Wu J L, Wu Quande. Nanoelectronics[J]. Chin. J. Semicond., 2003, 24(S1): 17.
      Citation:
      何杰, 王晓晖, 夏传钺. 国家自然科学基金半导体学科2001年项目概况分析[J]. 半导体学报(英文版), 2002, 23(2): 222-224.

      • Received Date: 2015-08-19

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