Chin. J. Semicond. > 2004, Volume 25 > Issue 12 > 1647-1651
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利用GaAs基上InGaAs应变层制备有序排列的InAs量子点

张春玲 , 赵凤瑷 , 徐波 , 金鹏 and 王占国

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Key words: Ⅲ-Ⅴ 族半导体材料, 应力, 量子点, 有序生长

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(12): 1647-1651
      张春玲, 赵凤瑷, 徐波, 金鹏, 王占国. 利用GaAs基上InGaAs应变层制备有序排列的InAs量子点[J]. 半导体学报(英文版), 2004, 25(12): 1647-1651.
      Citation:
      张春玲, 赵凤瑷, 徐波, 金鹏, 王占国. 利用GaAs基上InGaAs应变层制备有序排列的InAs量子点[J]. 半导体学报(英文版), 2004, 25(12): 1647-1651.
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      • Received Date: 2015-08-19

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