Chin. J. Semicond. > 2001, Volume 22 > Issue 7 > 846-852
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在InGaAsP/InP双异质结构中的光弹效应及其对侧向光的限制作用

邢启江 , 徐万劲 and 武作兵

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Key words: WNi/半导体接触, 光弹效应, InGaAsP/InP双异质结构, 平面型波导器件

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(7): 846-852
      邢启江, 徐万劲, 武作兵. 在InGaAsP/InP双异质结构中的光弹效应及其对侧向光的限制作用[J]. 半导体学报(英文版), 2001, 22(7): 846-852.
      Citation:
      邢启江, 徐万劲, 武作兵. 在InGaAsP/InP双异质结构中的光弹效应及其对侧向光的限制作用[J]. 半导体学报(英文版), 2001, 22(7): 846-852.
      shu

      • Received Date: 2015-08-20

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