Chin. J. Semicond. > 2002, Volume 23 > Issue 10 > 1093-1097
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用侧向外延生长法降低立方相GaN中的层错密度

沈晓明 , 付羿 , 冯淦 , 张宝顺 , 冯志宏 and 杨辉

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Key words: 立方相GaN, MOVPE, 侧向外延, SEM, TEM

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(10): 1093-1097
      沈晓明, 付羿, 冯淦, 张宝顺, 冯志宏, 杨辉. 用侧向外延生长法降低立方相GaN中的层错密度[J]. 半导体学报(英文版), 2002, 23(10): 1093-1097.
      Citation:
      沈晓明, 付羿, 冯淦, 张宝顺, 冯志宏, 杨辉. 用侧向外延生长法降低立方相GaN中的层错密度[J]. 半导体学报(英文版), 2002, 23(10): 1093-1097.
      shu

      • Received Date: 2015-08-19

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