Chin. J. Semicond. > 2004, Volume 25 > Issue 12 > 1652-1657
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厚表层Si柔性绝缘衬底上SiC薄膜的外延生长

王晓峰 , 王雷 , 赵万顺 , 孙国胜 , 黄风义 and 曾一平

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Key words: SOI, SiC, 大失配, 残存应变, 空洞

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(12): 1652-1657
      王晓峰, 王雷, 赵万顺, 孙国胜, 黄风义, 曾一平. 厚表层Si柔性绝缘衬底上SiC薄膜的外延生长[J]. 半导体学报(英文版), 2004, 25(12): 1652-1657.
      Citation:
      王晓峰, 王雷, 赵万顺, 孙国胜, 黄风义, 曾一平. 厚表层Si柔性绝缘衬底上SiC薄膜的外延生长[J]. 半导体学报(英文版), 2004, 25(12): 1652-1657.
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      • Received Date: 2015-08-19

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