Chin. J. Semicond. > 2004, Volume 25 > Issue 5 > 502-507

金属沾污对超薄栅氧(2. 5nm)特性的影响(英文)

王刘坤 , Twan Bearda , Karine Kenis , Sophia Arnauts , Patrick Van Doorne , 陈寿面 , Paul Mertens and Marc Heyns

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Key words: 栅氧完整性, 金属沾污, 本征电荷击穿, 斜坡电流应力, MOS电容器

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Received: 19 August 2015 Revised: Online: Published: 01 May 2004

Article Navigation > Journal of Semiconductors > 2004 > 25(5): 502-507

王刘坤, Twan Bearda, Karine Kenis, Sophia Arnauts, Patrick Van Doorne, 陈寿面, Paul Mertens, Marc Heyns. 金属沾污对超薄栅氧(2. 5nm)特性的影响(英文)[J]. 半导体学报(英文版), 2004, 25(5): 502-507.

Citation:

王刘坤, Twan Bearda, Karine Kenis, Sophia Arnauts, Patrick Van Doorne, 陈寿面, Paul Mertens, Marc Heyns. 金属沾污对超薄栅氧(2. 5nm)特性的影响(英文)[J]. 半导体学报(英文版), 2004, 25(5): 502-507.

王刘坤, Twan Bearda, Karine Kenis, Sophia Arnauts, Patrick Van Doorne, 陈寿面, Paul Mertens, Marc Heyns. 金属沾污对超薄栅氧(2. 5nm)特性的影响(英文)[J]. 半导体学报(英文版), 2004, 25(5): 502-507.

Citation:

王刘坤, Twan Bearda, Karine Kenis, Sophia Arnauts, Patrick Van Doorne, 陈寿面, Paul Mertens, Marc Heyns. 金属沾污对超薄栅氧(2. 5nm)特性的影响(英文)[J]. 半导体学报(英文版), 2004, 25(5): 502-507.

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