Chin. J. Semicond. > 2004, Volume 25 > Issue 5 > 492-496
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AlGaN/GaN/InGaN对称分别限制多量子阱激光器的优化设计(英文)

陆敏 , 方慧智 and 张国义

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Key words: AlGaN/GaN/InGaN, MQW, SCH

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(5): 492-496
      陆敏, 方慧智, 张国义. AlGaN/GaN/InGaN对称分别限制多量子阱激光器的优化设计(英文)[J]. 半导体学报(英文版), 2004, 25(5): 492-496.
      Citation:
      陆敏, 方慧智, 张国义. AlGaN/GaN/InGaN对称分别限制多量子阱激光器的优化设计(英文)[J]. 半导体学报(英文版), 2004, 25(5): 492-496.
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      • Received Date: 2015-08-19

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