Citation: |
汤晓燕, 张义门, 张玉明, 郜锦侠, 陈锐标. 6H-SiC肖特基源漏n沟MOSFET的数值-解析模型[J]. 半导体学报(英文版), 2004, 25(9): 1159-1163.
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Key words: 碳化硅, 肖特基势垒, MOSFET
Article views: 2004 Times PDF downloads: 1466 Times Cited by: 0 Times
Received: 19 August 2015 Revised: Online: Published: 01 September 2004
Citation: |
汤晓燕, 张义门, 张玉明, 郜锦侠, 陈锐标. 6H-SiC肖特基源漏n沟MOSFET的数值-解析模型[J]. 半导体学报(英文版), 2004, 25(9): 1159-1163.
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