Chin. J. Semicond. > 2002, Volume 23 > Issue 2 > 161-164
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立方相Al_xGa_(1-x)N/GaAs(100)的MOCVD外延生长

冯志宏 , 杨辉 , 徐大鹏 , 赵德刚 , 王海 and 段俐宏

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Key words: MOCVD, 立方相AlGaN, 光致发光, 扫描电镜, 低值氧化物

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    Received: 19 August 2015 Revised: Online: Published: 01 February 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(2): 161-164
      冯志宏, 杨辉, 徐大鹏, 赵德刚, 王海, 段俐宏. 立方相Al_xGa_(1-x)N/GaAs(100)的MOCVD外延生长[J]. 半导体学报(英文版), 2002, 23(2): 161-164.
      Citation:
      冯志宏, 杨辉, 徐大鹏, 赵德刚, 王海, 段俐宏. 立方相Al_xGa_(1-x)N/GaAs(100)的MOCVD外延生长[J]. 半导体学报(英文版), 2002, 23(2): 161-164.
      shu

      • Received Date: 2015-08-19

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