Ferromagnetic GaCrN Films Fabricated by Dual-Energy Implantation of Cr+

Jiang Lijuan; Wang Xiaoliang; Liu Chao; Xiao Hongling; Wang Cuimei; Ran Junxue; Hu Guoxin; Li Jianping

Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 341-344

Ferromagnetic GaCrN Films Fabricated by Dual-Energy Implantation of Cr+

Jiang Lijuan, Wang Xiaoliang, Liu Chao, Xiao Hongling, Wang Cuimei, Ran Junxue, Hu Guoxin and Li Jianping

+ Author Affiliations

Abstract: ：GaCrN ferromagnetic films with a thickness of 200nm are successfully prepared bv Cr+implantation at two ener. gies into n-GaN，p-GaN，and unintentionally doped GaN epilayers grown on sapphire substrates by MoCVD，followed by a short anneal to remove implantation damage.Powder X.ray diffraction is carried out to investigate the phase composition of the films.Magnetic properties determined from SQUID indicate a connection between the saturation magnetization and the initial carrier concentration of the samples，as in our experiment，post-implanted n.GaN and P.GaN show much stronger mag. netization than that of unintentiOnaUv doped GaN samples.

Key words: diluted magnetic semiconductor, GaCrN, ion implantation

1	(Ca,K)(Zn,Mn)₂As₂: Ferromagnetic semiconductor induced by decoupled charge and spin doping in CaZn₂As₂ Jinou Dong, Xueqin Zhao, Licheng Fu, Yilun Gu, Rufei Zhang, et al. Journal of Semiconductors, 2022, 43(7): 072501. doi: 10.1088/1674-4926/43/7/072501
2	Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes Jiazhen Sheng, Ki-Lim Han, TaeHyun Hong, Wan-Ho Choi, Jin-Seong Park, et al. Journal of Semiconductors, 2018, 39(1): 011008. doi: 10.1088/1674-4926/39/1/011008
3	Studies of Water V. Five Phonons in Protonic Semiconductor Lattice Model of Pure Liquid Water Binbin Jie, Chihtang Sah Journal of Semiconductors, 2017, 38(7): 071001. doi: 10.1088/1674-4926/38/7/071001
4	Progress in complementary metal-oxide-semiconductor silicon photonics and optoelectronic integrated circuits Hongda Chen, Zan Zhang, Beiju Huang, Luhong Mao, Zanyun Zhang, et al. Journal of Semiconductors, 2015, 36(12): 121001. doi: 10.1088/1674-4926/36/12/121001
5	Large-signal characterizations of DDR IMPATT devices based on group Ⅲ-Ⅴ semiconductors at millimeter-wave and terahertz frequencies Aritra Acharyya, Aliva Mallik, Debopriya Banerjee, Suman Ganguli, Arindam Das, et al. Journal of Semiconductors, 2014, 35(8): 084003. doi: 10.1088/1674-4926/35/8/084003
6	Chemical mechanical planarization of amorphous Ge₂Sb₂Te₅ with a soft pad Aodong He, Bo Liu, Zhitang Song, Yegang Lü, Juntao Li, et al. Journal of Semiconductors, 2013, 34(7): 076002. doi: 10.1088/1674-4926/34/7/076002
7	Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting Xiyuan Wang, Yongguang Huang, Dewei Liu, Xiaoning Zhu, Xiao Cui, et al. Journal of Semiconductors, 2013, 34(6): 063001. doi: 10.1088/1674-4926/34/6/063001
8	Structural and magnetic properties of Yb-implanted GaN Chunhai Yin, Chao Liu, Dongyan Tao, Yiping Zeng Journal of Semiconductors, 2013, 34(5): 053002. doi: 10.1088/1674-4926/34/5/053002
9	A theoretical model of the femtosecond laser ablation of semiconductors considering inverse bremsstrahlung absorption Lin Xiaohui, Zhang Chibin, Ren Weisong, Jiang Shuyun, Ouyang Quanhui, et al. Journal of Semiconductors, 2012, 33(4): 046002. doi: 10.1088/1674-4926/33/4/046002
10	Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD Tao Zhikuo, Zhang Rong, Xiu Xiangqian, Cui Xugao, Li Li, et al. Journal of Semiconductors, 2012, 33(7): 073002. doi: 10.1088/1674-4926/33/7/073002
11	The Complete Semiconductor Transistor and Its Incomplete Forms Jie Binbin, Sah Chih-Tang Journal of Semiconductors, 2009, 30(6): 061001. doi: 10.1088/1674-4926/30/6/061001
12	Single Crystalline Co-Doped ZnO Thin Films by Molecular Beam Epitaxy and Room Temperature Ferromagnetism Cao Qiang, Liu Guolei, Deng Jiangxia, Xing Pengfei, Tian Yufeng, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 282-284.
13	Growth and Characterization of Diluted Magnetic Cr-Doped InAs Self-Organized Quantum Dots Zheng Yuhong, Zhao Jianhua, Bi Jingfeng, Wang Weizhu, Deng Jiajun, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 211-214.
14	Characterization of Diluted Magnetic Semiconductor Mn_0.1Ti_0.9O_2-δ Thin Film Grown by Molecular Beam Epitaxy Xia Yanqiu, Wu Shuxiang, Liu Yajing, Yu Xiaolong, Li Shuwei, et al. Chinese Journal of Semiconductors , 2007, 28(7): 1058-1062.
15	Thin Highly-Relaxed SiGe Induced by Ion Implantion intothe Epitaxial Substrates Xu Xiangdong, Guo Fulong, Zhou Wei, Liu Zhihong, Zhang Zhaojian, et al. Chinese Journal of Semiconductors , 2006, 27(S1): 140-143.
16	Temperature Dependence of Vacuum Rabi Splitting in a Single Quantum Dot-Semiconductor Microcavity Zhu Kadi, Li Waisang Chinese Journal of Semiconductors , 2006, 27(3): 489-493.
17	Axial Local Lifetime Control in High-Voltage Diodes Based on Proximity Gettering of Platinum by Proton-Implantation Damages Jia Yunpeng, Zhang Bin, Sun Yuechen, Kang Baowei Chinese Journal of Semiconductors , 2006, 27(2): 294-297.
18	Enhancement of Ferromagnetic Transition Temperature in (GaMn)As by Post-Growth Annealing Deng Jiajun, Zhao Jianhua, Jiang Chunping, Niu Zhichuan, Yang Fuhua, et al. Chinese Journal of Semiconductors , 2005, 26(S1): 42-44.
19	Passively Mode Locked Diode-End-Pumped Yb∶YAB Laser with High Reflectivity Type Semiconductor Saturable Absorption Mirror Wang Yonggang, Ma Xiaoyu, Xue Yinghong, Sun Hong，Zhang Zhigang，and Wang Qingyue Chinese Journal of Semiconductors , 2005, 26(2): 250-253.
20	Two Steps B Ion-Implantation of Diamond Film Grown on an n-Type Si Substrate and Its p-n Junction Effects Chinese Journal of Semiconductors , 2005, 26(6): 1073-1076.

Search

GET CITATION

Jiang Lijuan, Wang Xiaoliang, Liu Chao, Xiao Hongling, Wang Cuimei, Ran Junxue, Hu Guoxin, Li Jianping. Ferromagnetic GaCrN Films Fabricated by Dual-Energy Implantation of Cr+[J]. Journal of Semiconductors, 2007, 28(S1): 341-344.

Jiang L J, Wang X L, Liu C, Xiao H L, Wang C M, Ran J X, Hu G X, Li J P. Ferromagnetic GaCrN Films Fabricated by Dual-Energy Implantation of Cr+[J]. Chin. J. Semicond., 2007, 28(S1): 341.

Export: BibTex EndNote

Article Metrics

Article views: 2163 Times PDF downloads: 412 Times Cited by: 0 Times

History

Received: 27 May 2016 Revised: Online: Published: 01 January 2007

：GaCrN ferromagnetic films with a thickness of 200nm are successfully prepared bv Cr+implantation at two ener. gies into n-GaN，p-GaN，and unintentionally doped GaN epilayers grown on sapphire substrates by MoCVD，followed by a short anneal to remove implantation damage.Powder X.ray diffraction is carried out to investigate the phase composition of the films.Magnetic properties determined from SQUID indicate a connection between the saturation magnetization and the initial carrier concentration of the samples，as in our experiment，post-implanted n.GaN and P.GaN show much stronger mag. netization than that of unintentiOnaUv doped GaN samples.

Ferromagnetic GaCrN Films Fabricated by Dual-Energy Implantation of Cr+

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Ferromagnetic GaCrN Films Fabricated by Dual-Energy Implantation of Cr+

Abstract

References

Proportional views

Catalog

Ferromagnetic GaCrN Films Fabricated by Dual-Energy Implantation of Cr+

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Ferromagnetic GaCrN Films Fabricated by Dual-Energy Implantation of Cr+

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content