Chin. J. Semicond. > 2002, Volume 23 > Issue 7 > 731-734
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量子点的形成对Si/Ge界面互扩散的影响

周星飞 , 施斌 , 胡冬枝 , 樊永良 , 龚大卫 and 蒋最敏

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Key words: Si/Ge界面互扩散, 量子点, 分子束外延

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    Received: 19 August 2015 Revised: Online: Published: 01 July 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(7): 731-734
      周星飞, 施斌, 胡冬枝, 樊永良, 龚大卫, 蒋最敏. 量子点的形成对Si/Ge界面互扩散的影响[J]. 半导体学报(英文版), 2002, 23(7): 731-734.
      Citation:
      周星飞, 施斌, 胡冬枝, 樊永良, 龚大卫, 蒋最敏. 量子点的形成对Si/Ge界面互扩散的影响[J]. 半导体学报(英文版), 2002, 23(7): 731-734.
      shu

      • Received Date: 2015-08-19

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