Chin. J. Semicond. > 2005, Volume 26 > Issue 4 > 651-655
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Electrical Properties of Ultra Thin Nitride/Oxynitride Stack Dielectrics pMOS Capacitor with Refractory Metal Gate

Zhong Xinghua , Wu Junfeng , Yang Jianjun and and Xu Qiuxia

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Key words: equivalent oxide thickness, nitride/oxynitride gate dielectric stack, high k, boron penetration, metal gate

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(4): 651-655
      Zhong Xinghua, Wu Junfeng, Yang Jianjun, and Xu Qiuxia. Electrical Properties of Ultra Thin Nitride/Oxynitride Stack Dielectrics pMOS Capacitor with Refractory Metal Gate[J]. 半导体学报(英文版), 2005, 26(4): 651-655.
      Citation:
      Zhong Xinghua, Wu Junfeng, Yang Jianjun, and Xu Qiuxia. Electrical Properties of Ultra Thin Nitride/Oxynitride Stack Dielectrics pMOS Capacitor with Refractory Metal Gate[J]. 半导体学报(英文版), 2005, 26(4): 651-655.
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      • Received Date: 2015-08-19

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