| Citation: |
Guo Tianlei, Zhao Fazhan, Liu Gang, Li Duoli, Li Jing, Zhao Lixin, Zhou Xiaoyin, Hai Chaohe, Han Zhengsheng. Total Dose Radiation Hardened PDSOI CMOS 64k SRAMs[J]. Journal of Semiconductors, 2007, 28(8): 1184-1186.
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Guo T L, Zhao F Z, Liu G, Li D L, Li J, Zhao L X, Zhou X Y, Hai C H, Han Z S. Total Dose Radiation Hardened PDSOI CMOS 64k SRAMs[J]. Chin. J. Semicond., 2007, 28(8): 1184.
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Total Dose Radiation Hardened PDSOI CMOS 64k SRAMs
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Abstract
The first domestic 1e6rad(Si) total dose hardened 1.2μm partially depleted silicon-on-insulator (PDSOI) 64k SRAM fabricated in SIMOX is demonstrated.The address access time is independent of temperature from -55 to 125℃ and independent of radiation up to 1e6rad(Si) for the supply voltage VDD.The standby current is 0.65μA before the total dose of radiation and is only 0.80mA after radiation exposure,which is much better than the specified 10mA.The operating power supply current is 33.0mA before and only 38.1mA afterward,which is much better than the specified 100mA.-
Keywords:
- PDSOI,
- SRAM,
- total dose,
- radiation
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References
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Proportional views
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