Chin. J. Semicond. > 1996, Volume 17 > Issue 8 > 568-572
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（100）和（111）BGaAs衬底上的In_（0．14）Ga_（0．86）As／GaAs量子阱的发光特性和光跃迁能量计算

张晓波，刘颖，杜国同，殷景志

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    Received: 18 August 2015 Revised: Online: Published: 01 August 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(8): 568-572
      张晓波，刘颖，杜国同，殷景志. （100）和（111）BGaAs衬底上的In_（0．14）Ga_（0．86）As／GaAs量子阱的发光特性和光跃迁能量计算[J]. 半导体学报(英文版), 1996, 17(8): 568-572.
      Citation:
      张晓波，刘颖，杜国同，殷景志. （100）和（111）BGaAs衬底上的In_（0．14）Ga_（0．86）As／GaAs量子阱的发光特性和光跃迁能量计算[J]. 半导体学报(英文版), 1996, 17(8): 568-572.
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      • Received Date: 2015-08-18

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