Chin. J. Semicond. > 2002, Volume 23 > Issue 11 > 1211-1216
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一种敏感的MOSFET ESD潜在损伤检测方法

马仲发 , 庄奕琪 , 杜磊 , 花永鲜 and 吴勇

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Key words: MOSFET, ESD, 潜在损伤, 1/f噪声, 检测方法

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    Received: 19 August 2015 Revised: Online: Published: 01 November 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(11): 1211-1216
      马仲发, 庄奕琪, 杜磊, 花永鲜, 吴勇. 一种敏感的MOSFET ESD潜在损伤检测方法[J]. 半导体学报(英文版), 2002, 23(11): 1211-1216.
      Citation:
      马仲发, 庄奕琪, 杜磊, 花永鲜, 吴勇. 一种敏感的MOSFET ESD潜在损伤检测方法[J]. 半导体学报(英文版), 2002, 23(11): 1211-1216.
      shu

      • Received Date: 2015-08-19

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