Chin. J. Semicond. > 1998, Volume 19 > Issue 12 > 908-912
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自动张量低能电子衍射对GaAs(-1-1-1)-(2×2)表面结构的研究

邓丙成 , 徐耕 and 余招贤

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    Received: 18 August 2015 Revised: Online: Published: 01 December 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(12): 908-912
      邓丙成, 徐耕, 余招贤. 自动张量低能电子衍射对GaAs(-1-1-1)-(2×2)表面结构的研究[J]. 半导体学报(英文版), 1998, 19(12): 908-912.
      Citation:
      邓丙成, 徐耕, 余招贤. 自动张量低能电子衍射对GaAs(-1-1-1)-(2×2)表面结构的研究[J]. 半导体学报(英文版), 1998, 19(12): 908-912.
      shu

      • Received Date: 2015-08-18

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