Chin. J. Semicond. > 2001, Volume 22 > Issue 7 > 871-874
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低剂量SIMOX圆片表层硅缺陷密度

郑望 , 陈猛 , 陈静 , 林梓鑫 and 王曦

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Key words: SOI, 缺陷, Secc

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(7): 871-874
      郑望, 陈猛, 陈静, 林梓鑫, 王曦. 低剂量SIMOX圆片表层硅缺陷密度[J]. 半导体学报(英文版), 2001, 22(7): 871-874.
      Citation:
      郑望, 陈猛, 陈静, 林梓鑫, 王曦. 低剂量SIMOX圆片表层硅缺陷密度[J]. 半导体学报(英文版), 2001, 22(7): 871-874.
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      • Received Date: 2015-08-20

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