Chin. J. Semicond. > 2002, Volume 23 > Issue 2 > 213-216
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CMOS/SOI 4Kb SRAM总剂量辐照实验

刘新宇 , 刘运龙 , 孙海锋 , 吴德馨 , 和致经 and 刘忠立

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Key words: CMOS/SOI4Kb, SRAM, 抗总剂量辐照

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    Received: 19 August 2015 Revised: Online: Published: 01 February 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(2): 213-216
      刘新宇, 刘运龙, 孙海锋, 吴德馨, 和致经, 刘忠立. CMOS/SOI 4Kb SRAM总剂量辐照实验[J]. 半导体学报(英文版), 2002, 23(2): 213-216.
      Citation:
      刘新宇, 刘运龙, 孙海锋, 吴德馨, 和致经, 刘忠立. CMOS/SOI 4Kb SRAM总剂量辐照实验[J]. 半导体学报(英文版), 2002, 23(2): 213-216.
      shu

      • Received Date: 2015-08-19

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