Chin. J. Semicond. > 1998, Volume 19 > Issue 2 > 127-131
|

CONTENTS

BF_2~+注入单晶硅和多晶硅栅快速热退火氟迁移特性的SIMS分析

张廷庆 , 刘家璐 , 李建军 and 赵元富

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2665 Times PDF downloads: 1342 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 February 1998

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1998  >  19(2): 127-131
      张廷庆, 刘家璐, 李建军, 赵元富. BF_2~+注入单晶硅和多晶硅栅快速热退火氟迁移特性的SIMS分析[J]. 半导体学报(英文版), 1998, 19(2): 127-131.
      Citation:
      张廷庆, 刘家璐, 李建军, 赵元富. BF_2~+注入单晶硅和多晶硅栅快速热退火氟迁移特性的SIMS分析[J]. 半导体学报(英文版), 1998, 19(2): 127-131.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return