Chin. J. Semicond. > 2001, Volume 22 > Issue 5 > 622-628
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凹槽深度与槽栅PMOSFET特性

任红霞 and 郝跃

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Key words: 深亚微米, 槽栅PMOSFET, 负结深, 器件特性

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    Received: 20 August 2015 Revised: Online: Published: 01 May 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(5): 622-628
      任红霞, 郝跃. 凹槽深度与槽栅PMOSFET特性[J]. 半导体学报(英文版), 2001, 22(5): 622-628.
      Citation:
      任红霞, 郝跃. 凹槽深度与槽栅PMOSFET特性[J]. 半导体学报(英文版), 2001, 22(5): 622-628.
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      • Received Date: 2015-08-20

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