Citation: |
Wang Yikai, Wang Yi, Gong Wenchao, He Lenian. High Stability LDO with Large Output Current[J]. Journal of Semiconductors, 2007, 28(7): 1149-1155.
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Wang Y K, Wang Y, Gong W C, He L N. High Stability LDO with Large Output Current[J]. Chin. J. Semicond., 2007, 28(7): 1149.
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High Stability LDO with Large Output Current
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Abstract
A design of a low-dropout (LDO) voltage regulator with an output current of 800mA is proposed.By introducing a zero-pole tracking circuit with a MOS resistor working in the linear region,the frequency response is independent of the load current.Moreover,with ameliorated miller compensation,a 60° phase margin is guaranteed.Based on the analysis of slewing behavior versus circuit parameters,the load regulation property is improved with a slew rate enhancement circuit which can supply a large current to speed up the slew rate.The precision of the output voltage is maintained within ±60mV under varying load conditions from 800 to 10mA,and the settling time is about 500μs.The chip is implemented in CSMC 0.6μm mixed-signal technology.The designed circuit is validated by the results of the chip test. -
References
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