Chin. J. Semicond. > 2002, Volume 23 > Issue 4 > 419-423
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考虑量子力学效应的超薄栅氧nMOSFET's直接隧穿电流二维模型

陈立锋 , 马玉涛 and 田立林

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Key words: MOSFET's, 量子效应, 栅隧穿电流, 器件模型

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(4): 419-423
      陈立锋, 马玉涛, 田立林. 考虑量子力学效应的超薄栅氧nMOSFET's直接隧穿电流二维模型[J]. 半导体学报(英文版), 2002, 23(4): 419-423.
      Citation:
      陈立锋, 马玉涛, 田立林. 考虑量子力学效应的超薄栅氧nMOSFET's直接隧穿电流二维模型[J]. 半导体学报(英文版), 2002, 23(4): 419-423.
      shu

      • Received Date: 2015-08-19

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