| Citation: |
Lu Shengli, Sun Zhilin, Sun Weifeng, Shi Longxing. A High Breakdown Voltage Thin SOI Device with a Vertically Linearly Graded Concentration Drift Region[J]. Journal of Semiconductors, 2005, 26(12): 2286-2289.
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Lu S L, Sun Z L, Sun W F, Shi L X. A High Breakdown Voltage Thin SOI Device with a Vertically Linearly Graded Concentration Drift Region[J]. Chin. J. Semicond., 2005, 26(12): 2286.
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A High Breakdown Voltage Thin SOI Device with a Vertically Linearly Graded Concentration Drift Region
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Abstract
As the thickness of an SOI layer varies,a minimum breakdown voltage is reached when the thickness is about 2μm.The vertical electric field of the SOI LDMOS with a drift region which is vertically linearly graded is constant.The vertically linearly graded concentration drift can be achieved by impurity implanting followed by thermal diffusion.In this way,the vertical breakdown voltage of SOI LDMOS with 2μm thickness SOI layer can be improved by 43%.The on-state resistance is lowered by 24% because of the higher impurity concentration of the SOI surface. -
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