Citation: |
陈效建, 吴旭, 李拂晓, 焦刚. Pt基埋栅势垒GaAs基增强型InAlAs/InGaAs改性高电子迁移率晶体管[J]. 半导体学报(英文版), 2004, 25(9): 1137-1142.
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Key words: MHEMT, 增强型, Pt基埋栅势垒, 稳定性
Article views: 2684 Times PDF downloads: 869 Times Cited by: 0 Times
Received: 19 August 2015 Revised: Online: Published: 01 September 2004
Citation: |
陈效建, 吴旭, 李拂晓, 焦刚. Pt基埋栅势垒GaAs基增强型InAlAs/InGaAs改性高电子迁移率晶体管[J]. 半导体学报(英文版), 2004, 25(9): 1137-1142.
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