Chin. J. Semicond. > 1997, Volume 18 > Issue 5 > 344-349
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MOS结构Si/SiO_2界面态的电荷泵测量

张国强 , 王国彬 , 余学锋 , 任迪远 and 严荣良

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    Received: 19 August 2015 Revised: Online: Published: 01 May 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(5): 344-349
      张国强, 王国彬, 余学锋, 任迪远, 严荣良. MOS结构Si/SiO_2界面态的电荷泵测量[J]. 半导体学报(英文版), 1997, 18(5): 344-349.
      Citation:
      张国强, 王国彬, 余学锋, 任迪远, 严荣良. MOS结构Si/SiO_2界面态的电荷泵测量[J]. 半导体学报(英文版), 1997, 18(5): 344-349.
      shu

      • Received Date: 2015-08-19

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