Chin. J. Semicond. > 2001, Volume 22 > Issue 6 > 677-683

CONTENTS

生长Ga_xAl_yIn_(1-x-y)N的准热力学模型(英文)

陆大成 and 段树坤

+ Author Affiliations

PDF

Key words: GaAlInN, MOVPE, 热力学, Ⅲ族氮化物

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2458 Times PDF downloads: 772 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 June 2001

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2001  >  22(6): 677-683
      陆大成, 段树坤. 生长Ga_xAl_yIn_(1-x-y)N的准热力学模型(英文)[J]. 半导体学报(英文版), 2001, 22(6): 677-683.
      Citation:
      陆大成, 段树坤. 生长Ga_xAl_yIn_(1-x-y)N的准热力学模型(英文)[J]. 半导体学报(英文版), 2001, 22(6): 677-683.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return