Chin. J. Semicond. > 2001, Volume 22 > Issue 5 > 604-608
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MOCVD生长的InGaN薄膜的离子束背散射沟道及其光致发光

李述体 , 江风益 , 彭学新 , 王立 , 熊传兵 , 李鹏 and 莫春兰

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Key words: MOCVD, InGaN, 卢瑟福背散射/沟道技术, 光致发光

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    Received: 20 August 2015 Revised: Online: Published: 01 May 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(5): 604-608
      李述体, 江风益, 彭学新, 王立, 熊传兵, 李鹏, 莫春兰. MOCVD生长的InGaN薄膜的离子束背散射沟道及其光致发光[J]. 半导体学报(英文版), 2001, 22(5): 604-608.
      Citation:
      李述体, 江风益, 彭学新, 王立, 熊传兵, 李鹏, 莫春兰. MOCVD生长的InGaN薄膜的离子束背散射沟道及其光致发光[J]. 半导体学报(英文版), 2001, 22(5): 604-608.
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      • Received Date: 2015-08-20

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