| Citation: |
Sun Ling, Liu Wei, Duan Zhenyong, Xu Zhongyi, Yang Huayue. Electrical Characteristics and Reliability of Ultra-Thin Gate Oxides (<2nm) with Plasma Nitridation[J]. Journal of Semiconductors, 2008, 29(11): 2143-2147.
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Sun L, Liu W, Duan Z Y, Xu Z Y, Yang H Y. Electrical Characteristics and Reliability of Ultra-Thin Gate Oxides (J. Semicond., 2008, 29(11): 2143.
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Electrical Characteristics and Reliability of Ultra-Thin Gate Oxides (<2nm) with Plasma Nitridation
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Abstract
MMT (modified magnetron typed) plasma nitridation and NO anneal are used to treat ultra-thin gate oxides in MOSFETs (metal-oxide-semiconductor field effect transistors).Dual-peak and single-peak N distributions are formed after nitridation.The dual-peak N distribution shows excellent electrical properties and superior reliability in terms of drain current,channel carrier mobility,and TDDB characteristics.The results indicate a means to extend silicon oxynitride as a promising gate dielectric for developing ultralarge scale integrated (ULSI) technology.-
Keywords:
- plasma nitridation,
- mobility,
- TDDB
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References
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Proportional views
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