| Citation: |
Gong Xin, Lü Ling, Hao Yue, Li Peixian, Zhou Xiaowei, Chen Haifeng. Study on ICP Etching Induced Damage in p-GaN[J]. Journal of Semiconductors, 2007, 28(7): 1097-1103.
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Gong X, Lü L, Hao Y, Li P X, Zhou X W, Chen H F. Study on ICP Etching Induced Damage in p-GaN[J]. Chin. J. Semicond., 2007, 28(7): 1097.
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Study on ICP Etching Induced Damage in p-GaN
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Abstract
The plasma-induced damage for p-GaN by inductively coupled plasma(ICP) etching with Cl2/N2 gas chemistry was studied.Effects of ICP power,RF power,chamber pressure,and Cl2 percentage on the physical and electrical characteristics of p-GaN were investigated.The results show that the surface roughness is relatively independent of these etching conditions and shows fairly smooth morphology (RMS＜1.2nm);the surface morphology has no direct effect on the electrical characteristics of p-GaN,and the deterioration of ohmic contact to the etched p-GaN is due to a decrease in hole concentration in the near-surface region through the creation of shallow donor states rather than surface roughening.-
Keywords:
- GaN,
- inductively coupled plasma etching,
- plasma damage
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References
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Proportional views
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