Chin. J. Semicond. > 2004, Volume 25 > Issue 12 > 1672-1674
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4H-SiC衬底AlGaN/GaN高电子迁移率晶体管的研制

郝跃 , 杨燕 , 张进城 and 王平

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Key words: 4H-SiC, AlGaN/GaN, 高电子迁移率晶体管

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(12): 1672-1674
      郝跃, 杨燕, 张进城, 王平. 4H-SiC衬底AlGaN/GaN高电子迁移率晶体管的研制[J]. 半导体学报(英文版), 2004, 25(12): 1672-1674.
      Citation:
      郝跃, 杨燕, 张进城, 王平. 4H-SiC衬底AlGaN/GaN高电子迁移率晶体管的研制[J]. 半导体学报(英文版), 2004, 25(12): 1672-1674.
      shu

      • Received Date: 2015-08-19

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